GaAs epi wafer
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「GaAs epi wafer」文章包含有：「砷化鎵光偵測器磊晶片GaAsPDepiWafer」、「砷化鎵假晶高電子移動率電晶體磊晶片GaAsPHEMTepiwafer」、「產業價值鏈資訊平台>產品介紹」、「GaAsEpiwafer」、「磊晶片」、「GaAsWafer」、「Overview」、「RFEpitaxialWafers」
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砷化鎵光偵測器磊晶片GaAs PD epi Wafer
http://www.vpec.com.tw
砷化鎵化合物半導體，由於具備優異的光電轉換效率，低暗電流，高電子移動率及優異的高頻響應特性，因此非常適合用於做為光偵測器的應用。而砷化鎵材料因可吸收短距離光纖 ...
砷化鎵假晶高電子移動率電晶體磊晶片GaAs PHEMT epi wafer
http://www.vpec.com.tw
微電子產品> 砷化鎵假晶高電子移動率電晶體磊晶片GaAs PHEMT epi wafer · 手機(Mobile Handsets) · 無線區域網路(WLAN) · 藍芽通訊(Blue Tooth) · 基地台(Base Stations) ...
產業價值鏈資訊平台> 產品介紹
https://ic.tpex.org.tw
砷化鎵異質接面雙載子電晶體磊晶片GaAs HBT epi wafer. http://www.vpec.com.tw ... 砷化鎵光偵測器磊晶片GaAs PD epi Wafer. http://www.vpec.com.tw/vpec/homeweb ...
GaAs Epiwafer
https://www.sumitomo-chem.co.j
Generic name. Compound Semiconductor Epitaxial Wafer, GaAs (Gallium arsenide) Metalorganic Vapor Phase Epitaxy. CAS no. 1303-00-0. Application. Automotive ...
磊晶片
https://www.uocnet.com
Epi Wafer. Item. Descriptions. Substrate. epi wafer. Red Laser. 635nm ~ 690nm. Edge emitting laser. GaAs. Infrared Laser. 780nm ~ 1060nm. Edge emitting laser.
GaAs Wafer
http://www.semiconductorwafers
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We ...
Overview
https://www.lmoc.com.tw
Founded in June 1997, LandMark Optoelectronics Corporation (LMOC) is a manufacturer of GaAs and InP based epi-wafers located in Tainan Science Park.
RF Epitaxial Wafers
https://www.iqep.com
Depending on substrate material, IQE can provide group III-V wafer sizes of 100mm, 150mm, and 200mm and group IV wafer sizes from 150mm to 300mm. ... GaAs HBTs, ...